advanced power n-channel enhancement electronics corp. mode power mosfet lower gate charge bv dss 150v simple drive requirement r ds(on) 150m surface mount package i d 2.6a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 1 AP15T15GM-HF -55 to 150 201105031 halogen-free product -55 to 150 parameter rating drain-source voltage 150 total power dissipation 2.5 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 2.6 continuous drain current 3 , v gs @ 10v 2.1 pulsed drain current 1 10 thermal data parameter storage temperature range operating junction temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g d s s s s g d d d d so-8 the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 150 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =2a - - 150 m ? v gs =4.5v, i d =1a - - 250 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =2a - 4 - s i dss drain-source leakage current v ds =120v, v gs =0v - - 1 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =2a - 22.5 36 nc q gs gate-source charge v ds =75v - 3.5 - nc q gd gate-drain ("miller") charge v gs =10v - 7.5 - nc t d(on) turn-on delay time v ds =75v - 8 - ns t r rise time i d =1a - 5.5 - ns t d(off) turn-off delay time r g =3.3 -25- ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 1050 1680 pf c oss output capacitance v ds =15v - 115 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.9a, v gs =0v - - 1.3 v t rr reverse recovery time i s =8a, v gs =0v, - 55 - ns q rr reverse recovery charge di/dt=100a/s - 140 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 125 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP15T15GM-HF
a p15t15gm-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v) 0 4 8 12 16 20 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =2a i d =1ma 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) i d =1ma
ap15t15gm-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 400 800 1200 1600 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =75v v ds =90v v ds =120v i d =2a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 125 /w 0.02 operation in this area limited by r ds(on)
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